(单词翻译:单击)
Researchers at Rensselaer Polytechnic1 Institute developed a new method for using water to tune2 the band gap of the nanomaterial graphene(石墨烯) , opening the door to new graphene-based transistors4 and nanoelectronics. By exposing a graphene film to humidity, Rensselaer Professor Nikhil Koratkar and his research team were able to create a band gap in graphene – a critical prerequisite(先决条件) to creating graphene transistors. At the heart of modern electronics, transistors are devices that can be switched "on" or "off" to alter an electrical signal. Computer microprocessors6 are comprised of millions of transistors made from the semiconducting material silicon7, for which the industry is actively8 seeking a successor.
Graphene, an atom-thick sheet of carbon atoms arranged like a nanoscale chain-link fence, has no band gap. Koratkar's team demonstrated how to open a band gap in graphene based on the amount of water they adsorbed to one side of the material, precisely9 tuning10 the band gap to any value from 0 to 0.2 electron volts11. This effect was fully12 reversible(可逆的) and the band gap reduced back to zero under vacuum. The technique does not involve any complicated engineering or modification13 of the graphene, but requires an enclosure where humidity can be precisely controlled.
"Graphene is prized for its unique and attractive mechanical properties. But if you were to build a transistor3 using graphene, it simply wouldn't work as graphene acts like a semi-metal and has zero band gap," said Koratkar, a professor in the Department of Mechanical, Aerospace14, and Nuclear Engineering at Rensselaer. "In this study, we demonstrated a relatively15 easy method for giving graphene a band gap. This could open the door to using graphene for a new generation of transistors, diodes(二极管) , nanoelectronics, nanophotonics, and other applications."
Results of the study were detailed16 in the paper "Tunable17 Band gap in Graphene by the Controlled Adsorbtion of Water Molecules18," published this week by the journal Small. See the full paper at: http://dx.doi.org/10.1002/smll.201001384
In its natural state, graphene has a peculiar19(特殊的,奇怪的) structure but no band gap. It behaves as a metal and is known as a good conductor. This is compared to rubber or most plastics, which are insulators21(绝缘体) and do not conduct electricity. Insulators have a large band gap – an energy gap between the valence(原子价) and conduction bands – which prevents electrons from conducting freely in the material.
Between the two are semiconductors23, which can function as both a conductor and an insulator20. Semiconductors have a narrow band gap, and application of an electric field can provoke(驱使,激怒) electrons to jump across the gap. The ability to quickly switch between the two states – "on" and "off" – is why semiconductors are so valuable in microelectronics.
"At the heart of any semiconductor22 device is a material with a band gap," Koratkar said. "If you look at the chips and microprocessors in today's cell phones, mobile devices, and computers, each contains a multitude of transistors made from semiconductors with band gaps. Graphene is a zero band gap material, which limits its utility. So it is critical to develop methods to induce a band gap in graphene to make it a relevant semiconducting material."
The symmetry(对称,整齐) of graphene's lattice(晶格) structure has been identified as a reason for the material's lack of band gap. Koratkar explored the idea of breaking this symmetry by binding24 molecules to only one side of the graphene. To do this, he fabricated graphene on a surface of silicon and silicon dioxide, and then exposed the graphene to an environmental chamber25 with controlled humidity. In the chamber, water molecules adsorbed to the exposed side of the graphene, but not on the side facing the silicon dioxide. With the symmetry broken, the band gap of graphene did, indeed, open up, Koratkar said. Also contributing to the effect is the moisture interacting with defects in the silicon dioxide substrate(基质) .
"Others have shown how to create a band gap in graphene by adsorbing different gasses to its surface, but this is the first time it has been done with water," he said. "The advantage of water adsorption, compared to gasses, is that it is inexpensive, nontoxic, and much easier to control in a chip application. For example, with advances in micro-packaging technologies it is relatively straightforward26(简单的,坦率的) to construct a small enclosure(附件,围墙) around certain parts or the entirety of a computer chip in which it would be quite easy to control the level of humidity."
Based on the humidity level in the enclosure, chip makers27 could reversibly tune the band gap of graphene to any value from 0 to 0.2 electron volts, Korarkar said.
收听单词发音
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polytechnic
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| adj.各种工艺的,综合技术的;n.工艺(专科)学校;理工(专科)学校 | |
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tune
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| n.调子;和谐,协调;v.调音,调节,调整 | |
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transistor
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| n.晶体管,晶体管收音机 | |
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transistors
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| 晶体管( transistor的名词复数 ); 晶体管收音机,半导体收音机 | |
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prerequisite
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| n.先决条件;adj.作为前提的,必备的 | |
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microprocessors
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| 微(信息)处理机( microprocessor的名词复数 ) | |
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silicon
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| n.硅(旧名矽) | |
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actively
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| adv.积极地,勤奋地 | |
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precisely
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| adv.恰好,正好,精确地,细致地 | |
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tuning
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| n.调谐,调整,调音v.调音( tune的现在分词 );调整;(给收音机、电视等)调谐;使协调 | |
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volts
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| n.(电压单位)伏特( volt的名词复数 ) | |
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fully
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| adv.完全地,全部地,彻底地;充分地 | |
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modification
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| n.修改,改进,缓和,减轻 | |
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aerospace
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| adj.航空的,宇宙航行的 | |
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relatively
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| adv.比较...地,相对地 | |
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detailed
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| adj.详细的,详尽的,极注意细节的,完全的 | |
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tunable
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| adj.可调的;可调谐 | |
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molecules
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| 分子( molecule的名词复数 ) | |
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peculiar
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| adj.古怪的,异常的;特殊的,特有的 | |
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insulator
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| n.隔离者;绝缘体 | |
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insulators
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| 绝缘、隔热或隔音等的物质或装置( insulator的名词复数 ) | |
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semiconductor
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| n.半导体 | |
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semiconductors
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| n.半导体( semiconductor的名词复数 ) | |
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binding
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| 有约束力的,有效的,应遵守的 | |
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chamber
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| n.房间,寝室;会议厅;议院;会所 | |
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straightforward
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| adj.正直的,坦率的;易懂的,简单的 | |
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makers
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| n.制造者,制造商(maker的复数形式) | |
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